View AOD4144_4623002.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

AOD4144 N-Channel SDMOSTM Power Transistor
General Description
The AOD4144 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications.
Features
VDS (V) =30V ID = 55A RDS(ON) < 8m RDS(ON) < 14m (VGS = 10V) (VGS = 10V) (VGS = 4.5V)
- RoHS Compliant - Halogen Free
100% UIS Tested! 100% R g Tested!
Top View D
TO-252 D-PAK
Bottom View
D
S G S
G
G S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Continuous Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH C TC=25C Power Dissipation B Power Dissipation A TC=100C TA=25C TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case TC=25C TC=100C TA=25C TA=70C ID IDM IDSM IAR EAR PD PDSM TJ, TSTG
Maximum 30 20 55 43 110 13 10 30 45 50 25 2.3 1.4 -55 to 175
Units V V A
Pulsed Drain Current C
A A mJ W W C
Symbol t 10s Steady-State Steady-State RJA RJC
Typ 18 44 2.4
Max 22 55 3
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4144
Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current 950 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 150 80 0.4 18 VGS=10V, VDS=15V, ID=20A 9 2.4 3.6 VGS=10V, VDS=15V, RL=0.75, RGEN=3 IF=20A, dI/dt=500A/s 7.8 14 Conditions ID=250A, VGS=0V VDS=30V, VGS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=20A TJ=125C 1.2 110 6.7 10 11 40 0.7 1 55 1190 220 130 0.9 23 11 3 6 7 10 22 5 9.8 17.6 11.7 21 1430 290 180 1.4 28 13 3.6 8.4 8 12 14 1.8 Min 30 10 50 100 2.4 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/s
A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. Ratings are based on low frequency and duty cycles to keep initial TJ =25C. D. The RJA is the sum of the thermal impedence from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. Rev 0 : Nov-08 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4144
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
110 100 90 80 70 ID (A) 50 40 30 20 10 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 16 Normalized On-Resistance 14 12 RDS(ON) (m) 10 8 6 4 2 0 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 5 10 VGS=10V VGS=4.5V 1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 VGS=10V ID=20A VGS=3.5V 0 0 1 2 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 20 4V 125C 25C ID(A) 60 4.5V 10V 7V 5V 100 6V 80 60 40 VDS=5V
17 5 2 10 VGS=4.5V
ID=20A
0 Temperature (C) Figure 4: On-Resistance vs. Junction 18 Temperature (Note E)
1.0E+02
40 35 30 RDS(ON) (m) 25 20 125C 15 10 5 0 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 4 25C ID=20A
1.0E+01 1.0E+00 IS (A) 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) 0.2 0.4
40
125C
25C
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4144
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 VDS=15V ID=20A Capacitance (pF) 1800 1600 1400 1200 1000 800 600 400 200 0 0 15 20 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 25 0 0 Crss 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Coss Ciss
8
VGS (Volts)
6
4
2
1000.0 100.0 ID (Amps) 10.0 1.0 0.1 0.0 0.01 10s
200 160 Power (W) 120 80 40 0 0.0001
10s 100s
RDS(ON) limited DC
TJ(Max)=175C TC=25C
1ms 10ms
TJ(Max)=175C TC=25C
17 5 2 10
0.1
1 VDS (Volts)
10
100
0.001
0.01
0.1
1
Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 ZJC Normalized Transient Thermal Resistance
Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
0
10
D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=3C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
1
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4144
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70 IAR(A) Peak Avalanche Current 60 50 40 30 20 10 0 0.000001 TA=150C TA=25C Power Dissipation (W) TA=125C 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note F) 0.00001 0.0001 0.001 Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability (Note C) 60 50 40 30 20 10
TA=100C
60 50 Current rating ID(A)
10000
TA=25C
1000
Power (W) 40 30 20 10 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note F)
100
17 5 2 10
10
1 0 0 0 0.01 0.1 1 10 100 1000 0
Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=55C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
40
0.1
0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1
PD Ton 10 T 100 1000
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4144
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1 0E 01
25 di/dt=800A/s 20 15 10 5 0 0 5 10 15 20 25 30 Qrr Irm 125C 25C 125C
12 10 8 Irm (A) 25C
12 di/dt=800A/s 10 8 trr (ns) 6 4 2 0 0 5 10 15 20 25 30 IS (A) Figure 18: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 15 Is=20A 12 125C Irm (A) trr (ns) 9 6 3 0 0 200 400 600 800 125 25C 25C trr 25C 125C
3 2.5 2 1.5 1 0.5 0
Qrr (nC)
6 4 2 0
S
25C 125C
IS (A) Figure 17: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 20 Is=20A 15 25C Qrr (nC) 10 Qrr 125C 8 6 4 2 0 1000 10
2.5 2 1.5 1 S 0.5 0 1000 S
trr
125 25C
5 Irm 0 0 200 400 600
800
di/dt (A/s) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. di/dt
di/dt (A/s) Figure 20: Diode Reverse Recovery Time and Softness Factor vs. di/dt
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
S
AOD4144
Gate Charge Test Circuit & W aveform
Vgs Qg
+
VDC
10V
VDC
DUT Vgs Ig
+ Vds -
Qgs
Qgd
Charge
Resistive Switching Test Circuit & Waveforms
RL Vds Vds
Vgs Rg Vgs
DUT
VDC
+ Vdd Vgs
t d(on) t on tr t d(off) t off tf
90%
10%
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L Vds Id Vgs Rg DUT Vgs Vgs Vgs
VDC
E AR= 1/2 LIAR Vds
2
BVDSS
+ Vdd Id
I AR
Diode Recovery Test Circuit & Waveforms
Vds + DUT Vgs
t rr
Q rr = - Idt
Vds -
Isd Vgs
L
Isd
IF
VDC
+ Vdd Vds
dI/dt I RM Vdd
Ig
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

▲Up To Search▲

Price & Availability of AOD4144

	To Download AOD4144 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .